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IRFL024NTR

Surface Mount

IRF

International Rectifier

IRFL024NTRPBF

Advanced Process Technology

IRF

International Rectifier

IRFL024Z

HEXFETPowerMOSFET

VDSS=55V RDS(on)=57.5m? ID=5.1A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea150°Cjunctionop

IRF

International Rectifier

IRFL024ZPBF

HEXFETPowerMOSFET

VDSS=55V RDS(on)=57.5m? ID=5.1A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea150°Cjunctionop

IRF

International Rectifier

IRFL024ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFL024ZTRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFR024

HEXFETPOWERMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierprovidethedesignedwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni

IRF

International Rectifier

IRFR024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導體

IRFR024

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR024

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR024

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR024

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR024

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Surface-mount(IRFR024,SiHFR024) ?Straightlead(IRFU024,SiHFU024) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半導體

IRFR024

N-ChannelEnhancementModeMOSFET

Description TheIRFR024NTusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=60VID=30A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

IRFR024A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR024N

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=17A??

IRF

International Rectifier

IRFR024N

UltraLowOn-Resistance

Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Ultr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR024N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR024N

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesoldering technigues.Powerdissipationlevelsupto1.5 wattsarepossibleintypicalsurfacemountapplications. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

詳細參數(shù)

  • 型號：

    IRFL024NTR

  • 功能描述：

    MOSFET N-CH 55V 2.8A SOT223

  • RoHS：

    否

  • 類別：

    分離式半導體產(chǎn)品 >> FET - 單

  • 系列：

    HEXFET®

  • 標準包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應商設備封裝：

    TO-220FP

  • 包裝：

    管件

供應商型號品牌批號封裝庫存備注價格
IR
21+
SOT-223
6000
原裝正品
 詢價
IR
24+
SOT-223
36800
詢價
IR
17+
SOT-223
6200
100%原裝正品現(xiàn)貨
 詢價
IR進口
24+
SOT-223
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
IR
23+
SOT-223
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IR
22+23+
SOT-223
27610
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
Infineon Technologies
21+
SOT-223
2500
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)!
 詢價
IR
24+
SOT-223
65300
一級代理/放心購買!
 詢價
IR
23+
SOT-223
30000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
IR
21+
SOT-223
8820
原裝現(xiàn)貨假一賠十
 詢價
更多IRFL024NTR供應商 更新時間2025-1-10 11:18:00

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