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IRFU4620PBF

HEXFET Power MOSFET

IRF

International Rectifier

IRGB4620DPBF

InsulatedGateBipolarTransistorwithUltrafastSoftRecoveryDiode

Features LowVCE(ON)andswitchinglosses SquareRBSOAandmaximumjunctiontemperature175°C PositiveVCE(ON)temperaturecoefficientandtight distributionofparameters 5μsShortCircuitSOA Lead-Free,RoHSCompliant Benefits Highefficiencyinawiderangeofa

IRF

International Rectifier

IRGB4620DPBF

InsulatedGateBipolarTransistorwithUltrafastSoftRecoveryDiode

Features ??LowVCE(ON)andswitchinglosses ??SquareRBSOAandmaximumjunctiontemperature175°C ??PositiveVCE(ON)temperaturecoefficient ??5μsShortCircuitSOA ??Lead-Free,RoHSCompliant Benefits ??Highefficiencyinawiderangeofapplicationsandswitching ???frequencies

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRGIB4620DPbF

InsulatedGateBipolarTransistorwithUltrafastSoftRecoveryDiode

Features ??LowVCE(ON)andswitchinglosses ??SquareRBSOAandmaximumjunctiontemperature175°C ??PositiveVCE(ON)temperaturecoefficient ??5μsShortCircuitSOA ??Lead-Free,RoHSCompliant Benefits ??Highefficiencyinawiderangeofapplicationsandswitching ???frequencies

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRGP4620D-EPBF

InsulatedGateBipolarTransistorwithUltrafastSoftRecoveryDiode

Features LowVCE(ON)andswitchinglosses SquareRBSOAandmaximumjunctiontemperature175°C PositiveVCE(ON)temperaturecoefficientandtight distributionofparameters 5μsShortCircuitSOA Lead-Free,RoHSCompliant Benefits Highefficiencyinawiderangeofa

IRF

International Rectifier

IRGP4620DPbF

InsulatedGateBipolarTransistorwithUltrafastSoftRecoveryDiode

Features ??LowVCE(ON)andswitchinglosses ??SquareRBSOAandmaximumjunctiontemperature175°C ??PositiveVCE(ON)temperaturecoefficient ??5μsShortCircuitSOA ??Lead-Free,RoHSCompliant Benefits ??Highefficiencyinawiderangeofapplicationsandswitching ???frequencies

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRGP4620DPBF

InsulatedGateBipolarTransistorwithUltrafastSoftRecoveryDiode

Features LowVCE(ON)andswitchinglosses SquareRBSOAandmaximumjunctiontemperature175°C PositiveVCE(ON)temperaturecoefficientandtight distributionofparameters 5μsShortCircuitSOA Lead-Free,RoHSCompliant Benefits Highefficiencyinawiderangeofa

IRF

International Rectifier

IRGS4620DPBF

InsulatedGateBipolarTransistorwithUltrafastSoftRecoveryDiode

Features LowVCE(ON)andswitchinglosses SquareRBSOAandmaximumjunctiontemperature175°C PositiveVCE(ON)temperaturecoefficientandtight distributionofparameters 5μsShortCircuitSOA Lead-Free,RoHSCompliant Benefits Highefficiencyinawiderangeofa

IRF

International Rectifier

IRGS4620DPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRGS4620DPbF

InsulatedGateBipolarTransistorwithUltrafastSoftRecoveryDiode

Features ??LowVCE(ON)andswitchinglosses ??SquareRBSOAandmaximumjunctiontemperature175°C ??PositiveVCE(ON)temperaturecoefficient ??5μsShortCircuitSOA ??Lead-Free,RoHSCompliant Benefits ??Highefficiencyinawiderangeofapplicationsandswitching ???frequencies

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFU4620PBF

  • 功能描述：

    MOSFET MOSFT 200V 24A 78mOhm 25nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
23+
Pak
7750
全新原裝優(yōu)勢(shì)
 詢價(jià)
IR
23+
TO-251
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
IR
2020+
TO220
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價(jià)
IR
16+
TO-251
295
普通
 詢價(jià)
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
INFINEON
1503+
TO-251
3000
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
IR
23+
IPAK
10000
公司只做原裝正品
 詢價(jià)
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
IR
21+
TO-251
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
更多IRFU4620PBF供應(yīng)商 更新時(shí)間2025-1-28 14:03:00

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