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IRG4BC20FPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage ?Lead-Free Benef

IRF

International Rectifier

IRG4BC20FPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4BC20FPBF

包裝：管件 封裝/外殼：TO-220-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 16A 60W TO220AB

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4BC20FPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4BC20K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRF

International Rectifier

IRG4BC20KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShort CircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameterdistributionandhi

IRF

International Rectifier

IRG4BC20KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAGASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC20KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?ShortCircuitRatedUltraFast:Optimizedfor highoperatingfrequencies>5.0kHz,andShort CircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneration ?IGBTco-packagedwithHEXF

IRF

International Rectifier

IRG4BC20KDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

ShortCircuitRatedUltraFastIGBT Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene

IRF

International Rectifier

IRG4BC20KD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

ShortCircuitRatedUltraFastIGBT Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene

IRF

International Rectifier

IRG4BC20KD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULRTAFASTSOFRRECOVERYDIODE

Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration ?IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC20KS

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRF

International Rectifier

IRG4BC20K-S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRF

International Rectifier

IRG4BC20K-SPBF

ShortCircuitRatedUltraFastIGBT

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgenerations ?

IRF

International Rectifier

IRG4BC20MD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardTO-220ABpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforinterme

IRF

International Rectifier

IRG4BC20MDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardTO-220ABpackage ?Lead-Free Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermed

IRF

International Rectifier

IRG4BC20MDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardD2Pakpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication

IRF

International Rectifier

IRG4BC20MD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardD2Pakpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication

IRF

International Rectifier

IRG4BC20MD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC20MD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    IRG4BC20FPBF

  • 制造商：

    Infineon Technologies

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • 不同?Vge、Ic 時(shí)?Vce(on)（最大值）：

    2V @ 15V，9A

  • 開關(guān)能量：

    70μJ（開），600μJ（關(guān)）

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td（開/關(guān)）值：

    24ns/190ns

  • 測(cè)試條件：

    480V，9A，50 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3

  • 供應(yīng)商器件封裝：

    TO-220AB

  • 描述：

    IGBT 600V 16A 60W TO220AB

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
原廠原包
24+
原裝
38560
原裝進(jìn)口現(xiàn)貨,工廠客戶可以放款。17377264928微信同
 詢價(jià)
IR
24+
TO-220AB
205
詢價(jià)
Infineon
18+
NA
3557
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價(jià)
IR
1106+
TO220
6900
普通
 詢價(jià)
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢價(jià)
IFA
2021+
SMD
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
INFINEON
1809+
TO-220
3675
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
Infineon
22+
NA
336
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
IR
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多IRG4BC20FPBF供應(yīng)商 更新時(shí)間2025-1-12 12:00:00

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