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IRG4BC20KD-SPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULRTAFAST SOFR RECOVERY DIODE

Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration ?IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC20KS

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRF

International Rectifier

IRG4BC20K-S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRF

International Rectifier

IRG4BC20K-SPBF

ShortCircuitRatedUltraFastIGBT

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgenerations ?

IRF

International Rectifier

IRG4BC20MD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardTO-220ABpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforinterme

IRF

International Rectifier

IRG4BC20MDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardTO-220ABpackage ?Lead-Free Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermed

IRF

International Rectifier

IRG4BC20MDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardD2Pakpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication

IRF

International Rectifier

IRG4BC20MD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features ?Rugged:10μsecshortcircuitcapableatVGS=15V ?LowVCE(on)for4to10kHzapplications ?IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode ?IndustrystandardD2Pakpackage Benefits ?Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication

IRF

International Rectifier

IRG4BC20MD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC20MD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC20S

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC20S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC20SD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

Features ?Extremelylowvoltagedrop1.4Vtyp.@10A ?S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. ?VeryTightVce(on)distribution ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-para

IRF

International Rectifier

IRG4BC20SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Extremelylowvoltagedrop1.4Vtyp.@10A ?S-Series:Minimizespowerdissipationatupto3KHzPWMfrequencyininverterdrives,upto4KHzinbrushlessDCdrives. ?VeryTightVce(on)distribution ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-paralleldio

IRF

International Rectifier

IRG4BC20SDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

IRF

International Rectifier

IRG4BC20SD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=10A)

IRF

International Rectifier

IRG4BC20SD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIOD

IRF

International Rectifier

IRG4BC20SPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC20SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC20U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRG4BC20KD-SPBF

  • 功能描述：

    IGBT 晶體管 600V ULTRAFAST 8-25 KHZ COPACK IGBT

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-263
160
只做原廠渠道 可追溯貨源
 詢價
IR
24+
TO-263
464
詢價
IR
23+
D2PAK
7750
全新原裝優(yōu)勢
 詢價
Infineon
18+
NA
3081
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價
IR
13+PBF
TO-263
504
現(xiàn)貨
 詢價
Infineon
1931+
N/A
551
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
INFINEON/英飛凌
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
INFINEON
1809+
TO-263
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多IRG4BC20KD-SPBF供應(yīng)商 更新時間2025-1-12 16:36:00

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