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IRG4BC20UDSRP

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode ?Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC20UDSTRRP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode ?Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC20UPBF

ULTRAFASTSPEEDIGBT

IRF

International Rectifier

IRG4BC20UPBF

UltraFastSpeedIGBT

Features ?UltraFast:optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage ?Lead-Free Benefits ?Generati

IRF

International Rectifier

IRG4BC20W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.16V,@Vge=15V,Ic=6.5A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTde

IRF

International Rectifier

IRG4BC20WPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesignandc

IRF

International Rectifier

IRG4BC20WPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC20WS

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.16V,@Vge=15V,Ic=6.5A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTde

IRF

International Rectifier

IRG4BC20W-S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.16V,@Vge=15V,Ic=6.5A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTde

IRF

International Rectifier

IRG4BC20W-SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-263
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+24
TO-263
59630
主營(yíng)原裝MOS,二三級(jí)管,肖特基,功率場(chǎng)效應(yīng)管
 詢價(jià)
IR
23+
TO-263
7000
詢價(jià)
Infineon Technologies
21+
D2PAK
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
Infineon Technologies
23+
D2PAK
9000
原裝正品，支持實(shí)單
 詢價(jià)
Infineon Technologies
21+
D2PAK
800
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!
 詢價(jià)
INFINEON
1503+
TO-263
3000
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多IRG4BC20UDSRP供應(yīng)商 更新時(shí)間2025-2-3 14:03:00

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