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IRG4BC20UDSTRRP

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies 8-40kHzinhardswitching,>200kHzinresonant mode ?Generation4IGBTdesignprovidestighterparameter distributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC20F

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC20F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Genera

IRF

International Rectifier

IRG4BC20FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features ?Fast:optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistribution andhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recovery

IRF

International Rectifier

IRG4BC20FD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC20FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFRRECOVERYDIODE

IRF

International Rectifier

IRG4BC20FDPBF

OPTIMIZEDFORMEDIUMOPERATING

IRF

International Rectifier

IRG4BC20FD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4BC20FD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEFastCoPackIGBT

Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4BC20FD-STRL

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A)

Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4BC20FPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage ?Lead-Free Benef

IRF

International Rectifier

IRG4BC20FPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC20K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRF

International Rectifier

IRG4BC20KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShort CircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameterdistributionandhi

IRF

International Rectifier

IRG4BC20KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAGASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC20KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?ShortCircuitRatedUltraFast:Optimizedfor highoperatingfrequencies>5.0kHz,andShort CircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneration ?IGBTco-packagedwithHEXF

IRF

International Rectifier

IRG4BC20KDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

ShortCircuitRatedUltraFastIGBT Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene

IRF

International Rectifier

IRG4BC20KD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

ShortCircuitRatedUltraFastIGBT Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene

IRF

International Rectifier

IRG4BC20KD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULRTAFASTSOFRRECOVERYDIODE

Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration ?IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC20KS

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRG4BC20UDSTRRP

  • 功能描述：

    IGBT 模塊 600V 13A

  • RoHS：

    否

  • 制造商：

    Infineon Technologies

  • 產(chǎn)品：

    IGBT Silicon Modules

  • 配置：

    Dual 集電極—發(fā)射極最大電壓

  • VCEO：

    600 V

  • 集電極—射極飽和電壓：

    1.95 V 在25

  • C的連續(xù)集電極電流：

    230 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    445 W

  • 最大工作溫度：

    + 125 C

  • 封裝/箱體：

    34MM

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
INFINEON/英飛凌
21+
D2PAK
60000
絕對原裝正品現(xiàn)貨,假一罰十
 詢價(jià)
Infineon Technologies
21+
D2PAK
800
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價(jià)格(誠信經(jīng)營)!
 詢價(jià)
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
INFINEON
1809+
TO-263
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
INTERNATIONALRECTIFIER
23+
NA
30000
房間原裝現(xiàn)貨特價(jià)熱賣,有單詳談
 詢價(jià)
Infineon Technologies
22+
D2PAK
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Infineon Technologies
21+
D2PAK
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
INTERNATIONALRECTIFIER
23+
NA
7294
電子元器件供應(yīng)原裝現(xiàn)貨. 優(yōu)質(zhì)獨(dú)立分銷。原廠核心渠道
 詢價(jià)
INTERNATIONALRECTIFIER
NA
8600
原裝正品,歡迎來電咨詢!
 詢價(jià)
更多IRG4BC20UDSTRRP供應(yīng)商 更新時(shí)間2025-1-12 14:18:00

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