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IRG4BC40U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)

Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Gener

IRF

International Rectifier

IRG4BC40U

Fit Rate / Equivalent Device Hours

IRF

International Rectifier

IRG4BC40U

包裝:卷帶(TR) 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 40A 160W TO220AB

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4BC40UPBF

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT

IRF

International Rectifier

IRG4BC40UD

Fit Rate / Equivalent Device Hours

IRF

International Rectifier

IRG4BC40UPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4BC40UPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4BC40UPBF

包裝:管件 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 40A 160W TO220AB

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4BC40W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A)

Features ?DesignedexpresslyforSwitch-ModePower SupplyandPFC(powerfactorcorrection) applications ?Industry-benchmarkswitchinglossesimprove efficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBT

IRF

International Rectifier

IRG4BC40WL

INSULATEDGATEBIPOLARTRANSISTOR

Features ?DesignedexpresslyforSwitch-ModePower SupplyandPFC(powerfactorcorrection) applications ?Industry-benchmarkswitchinglossesimprove efficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBT

IRF

International Rectifier

IRG4BC40WPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC40WPBF

ISSULATEDGATEBIPOLARTRANSISTOR

Features ?DesignedexpresslyforSwitch-ModePower SupplyandPFC(powerfactorcorrection) applications ?Industry-benchmarkswitchinglossesimprove efficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBT

IRF

International Rectifier

IRG4BC40WS

INSULATEDGATEBIPOLARTRANSISTOR

Features ?DesignedexpresslyforSwitch-ModePower SupplyandPFC(powerfactorcorrection) applications ?Industry-benchmarkswitchinglossesimprove efficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBT

IRF

International Rectifier

IRG4BC40WSPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC40WSPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?DesignedexpresslyforSwitch-ModePower SupplyandPFC(powerfactorcorrection) applications ?Industry-benchmarkswitchinglossesimprove efficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBT

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IRG4BC40U

  • 制造商:

    Infineon Technologies

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    卷帶(TR)

  • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

    2.1V @ 15V,20A

  • 開關(guān)能量:

    320μJ(開),350μJ(關(guān))

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td(開/關(guān))值:

    34ns/110ns

  • 測試條件:

    480V,25A,10 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3

  • 供應(yīng)商器件封裝:

    TO-220AB

  • 描述:

    IGBT 600V 40A 160W TO220AB

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Infineon(英飛凌)
23+
TO-220
942
原廠訂貨渠道,支持BOM配單一站式服務(wù)
詢價(jià)
IR
23+
TO-220
65400
詢價(jià)
IR
2020+
TO-220
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
IR
23+
TO-220
9896
詢價(jià)
IR
06+
TO-220
3000
自己公司全新庫存絕對有貨
詢價(jià)
IR
23+
TO220
7750
全新原裝優(yōu)勢
詢價(jià)
IR
23+
TO220-3
5000
原裝正品,假一罰十
詢價(jià)
IR
17+
TO-220
6200
100%原裝正品現(xiàn)貨
詢價(jià)
IR
16+
TO-220
10000
全新原裝現(xiàn)貨
詢價(jià)
IR
24+
TO220-3
39
詢價(jià)
更多IRG4BC40U供應(yīng)商 更新時(shí)間2025-1-12 8:12:00