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2N7002

Marking：K72；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitanc

DIODES

Diodes Incorporated

2N7002DW

Marking：K72；Package：SOT-363；Plastic-Encapsulate MOSFETs

DualN-channelMOSFET FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

2N7002DW

Marking：K72；Package：SOT-363；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(Rds(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?Lo

DIODES

Diodes Incorporated

2N7002DWQ-13-F

Marking：K72；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The

DIODES

Diodes Incorporated

2N7002DWQ-7-F

Marking：K72；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The

DIODES

Diodes Incorporated

2N7002K

Marking：K72；Package：SOT-23；N-Ch Small Signal MOSFET with ESD Protection

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2N7002K_R1_00501

Marking：K72；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ?RDS(ON),VGS@10V,ID@500mA

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

2N7002K-AU_R1_000A2

Marking：K72；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET–ESD Protected

Features ?RDS(ON),VGS@10V,ID@500mA

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

2N7002KW

Marking：K72；Package：SOT-323；N-Ch Small Signal MOSFET with ESD Protection

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2N7002KW

Marking：K72；Package：SOT-323；N-Ch Small Signal MOSFET with ESD Protection

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SECELECTRONICS

SEC Electronics Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    K72

  • 制造商：

    Siemens

  • 包裝：

    盒

  • 描述：

    HEATER HEATER ELEMENT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
DIODES/美臺(tái)
23+
SOT23-3
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
 詢價(jià)
EPCOS
17+
SIP-5
6200
詢價(jià)
EPCOS
24+
SOP18
23
詢價(jià)
24+
SOP23-6
2300
絕對(duì)原裝自家現(xiàn)貨!真實(shí)庫存!歡迎來電!
 詢價(jià)
BAOKE
2016+
ZIP-5
5500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
EPCOS
SIP5
1994
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢價(jià)
EPCOS
2020+
SIP
875
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
EPCOS
2016+
ZIP5
6523
只做原裝正品現(xiàn)貨!或訂貨!
 詢價(jià)
富士通
23+
TO-247
3000
全新原裝
 詢價(jià)
EPCOS
23+
SOP18
5000
原裝正品,假一罰十
 詢價(jià)
更多K72供應(yīng)商 更新時(shí)間2025-1-16 16:49:00

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