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36NM60N

Automotive-gradeN-channel600V,0.093Ω,29A,MDmesh?IIPowerMOSFETinaD2PAKpackage

Features ?Designedforautomotiveapplicationsand AEC-Q101qualified ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgene

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB36NM60N

Automotive-gradeN-channel600V,0.097typ.,29AFDmeshII

Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB36NM60N

Automotive-gradeN-channel600V,0.093Ω,29A,MDmesh?IIPowerMOSFETinaD2PAKpackage

Features ?Designedforautomotiveapplicationsand AEC-Q101qualified ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgene

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB36NM60ND

Automotive-gradeN-channel600V,0.097typ.,29AFDmeshII

Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW36NM60N

N-channel600V,0.092Ω,29A,MDmesh?IIPowerMOSFETinTO-247

Features ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications –Automotive Description Thisdeviceismadeusingthesecondgeneration ofMDmesh?technology.Thisrevolutionary PowerMOSFETassociatesanewve

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW36NM60ND

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=29A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.11Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW36NM60ND

Automotive-gradeN-channel600V,0.097typ.,29AFDmeshII

Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

供應(yīng)商型號品牌批號封裝庫存備注價格
ST/意法
22+
D2PAK
22866
詢價
Sage Millmeter
24+
模塊
400
詢價
STMicroelectronics
21+
D2PAK
1000
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)!!
 詢價
ST/意法
23+
SO-263
25000
代理原裝現(xiàn)貨,假一賠十
 詢價
ST(意法半導(dǎo)體)
2447
D2PAK
105000
1000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
ST
21+
SO-263
16533
原裝現(xiàn)貨假一賠十
 詢價
STM
1809+
TO-263
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價
22+
NA
4000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
ST/意法半導(dǎo)體
23+
TO-263-3
6900
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多STB36NM60ND-CUTTAPE供應(yīng)商 更新時間2025-3-30 8:00:00

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