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IXSM30N60

Low VCE(sat) IGBT, High Speed IGBT

LowVCE(sat)IGBTHighSpeedIGBT ShortCircuitSOACapability Features ?Internationalstandardpackages ?GuaranteedShortCircuitSOAcapability ?LowVCE(sat) -forlowon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?Fast

IXYS

IXYS Corporation

IXSM30N60A

Low VCE(sat) IGBT, High Speed IGBT

LowVCE(sat)IGBTHighSpeedIGBT ShortCircuitSOACapability Features ?Internationalstandardpackages ?GuaranteedShortCircuitSOAcapability ?LowVCE(sat) -forlowon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?Fast

IXYS

IXYS Corporation

IXST30N60B

HighSpeedIGBT

HighSpeedIGBT ShortCircuitSOACapability Features ●Internationalstandardpackages ●ShortCircuitSOAcapability ●HighfrequencyIGBT ●NewgenerationHDMOSTMprocess Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersupplies

IXYS

IXYS Corporation

IXST30N60C

HighSpeedIGBT

HighSpeedIGBT ShortCircuitSOACapability Features ●Internationalstandardpackages ●ShortCircuitSOAcapability ●HighfrequencyIGBT ●NewgenerationHDMOSTMprocess Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersupplies

IXYS

IXYS Corporation

IXTH30N60P

PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features lFastRecoverydiode lUnclampedInductiveSwitching(UIS)rated lInternationalstandardpackages lLowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXTH30N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTQ30N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTQ30N60P

PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features lFastRecoverydiode lUnclampedInductiveSwitching(UIS)rated lInternationalstandardpackages lLowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXTT30N60P

PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features lFastRecoverydiode lUnclampedInductiveSwitching(UIS)rated lInternationalstandardpackages lLowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXTV30N60P

PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features lFastRecoverydiode lUnclampedInductiveSwitching(UIS)rated lInternationalstandardpackages lLowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IXSM30N60

  • 制造商：

    IXYS

  • 制造商全稱：

    IXYS Corporation

  • 功能描述：

    Low VCE(sat) IGBT, High Speed IGBT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IXYS
9836
4
公司優(yōu)勢(shì)庫(kù)存 熱賣(mài)中!
 詢價(jià)
IXYS
23+
模塊
595
全新原裝正品,量大可訂貨!可開(kāi)17%增值票!價(jià)格優(yōu)勢(shì)!
 詢價(jià)
IXYS
專業(yè)模塊
MODULE
8513
模塊原裝主營(yíng)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
IXYS
2023+
MODULE
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
IXYS
24+
SOT227
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
 詢價(jià)
IXYS/艾賽斯
23+
MODULE
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
IXYSCORPORAT
05+
原廠原裝
4218
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IXYS
24+
SOT227
269
詢價(jià)
IXYS
22+
SOT227
8000
原裝正品支持實(shí)單
 詢價(jià)
更多IXSM30N60供應(yīng)商 更新時(shí)間2025-1-25 9:02:00

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