| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MRF581 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?GainatOptimumNoiseFigure=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveMacroXPackage | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
MRF581 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?GainatOptimumNoiseFigure=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveMacroXPackage | ADPOW Advanced Power Technology | ADPOW | |
MRF581 | NPN SILICON RF TRANSISTOR DESCRIPTION: TheMRF581isDesignedforHighcurrentlowPowerAmplifierApplicationsupto1.0GHz. FEATURES: ?LowNoiseFigure ?LowIntermodulationDistortion ?HighGain ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | |
MRF581 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?GainatOptimumNoiseFigure=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveMacroXPackage | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | |
MRF581 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
MRF581 | 包裝：卷帶（TR） 封裝/外殼：微型-X 陶瓷 84C 類別：分立半導體產品 晶體管 - 雙極（BJT）- 射頻 描述：RF TRANS NPN 18V 5GHZ MICRO X | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON TheRFLine NPNSilicon High-FrequencyTransistor Designedforhighcurrent,lowpoweramplifiersupto1.0GHz. ?LowNoise(2.0dB@500MHz) ?LowIntermodulationDistortion ?HighGain ?State–of–the–ArtTechnology FineLineGeometry ArsenicEmitters GoldTopMetallization | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | ADPOW Advanced Power Technology | ADPOW | ||
NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: TheASIMRF5812isDesignedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. FEATURES: ?LowNoise–2.5dB@500MHz ?Ftau–5.0GHz@10V,75mA ?CostEffectiveSO-8package | ASI Advanced Semiconductor | ASI | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | ADPOW Advanced Power Technology | ADPOW | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?GainatOptimumNoiseFigure=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveMacroXPackage | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?GainatOptimumNoiseFigure=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveMacroXPackage | ADPOW Advanced Power Technology | ADPOW | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?GainatOptimumNoiseFigure=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveMacroXPackage | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
產品屬性
- 產品編號：
MRF581
- 制造商：
Microsemi Corporation
- 類別：
分立半導體產品 > 晶體管 - 雙極（BJT）- 射頻
- 包裝：
卷帶（TR）
- 晶體管類型：
NPN
- 電壓 - 集射極擊穿（最大值）：
18V
- 頻率 - 躍遷：
5GHz
- 噪聲系數(shù)（dB，不同 f 時的典型值）：
3dB ~ 3.5dB @ 500MHz
- 增益：
13dB ~ 15.5dB
- 功率 - 最大值：
1.25W
- 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：
50 @ 50mA，5V
- 電流 - 集電極 (Ic)（最大值）：
200mA
- 工作溫度：
150°C（TJ）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
微型-X 陶瓷 84C
- 供應商器件封裝：
微型-X 陶瓷 84C
- 描述：
RF TRANS NPN 18V 5GHZ MICRO X
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MRF581MOTOROL |
19+ |
TO-59 |
6000 |
原裝現(xiàn)貨,特價供應 |
詢價 | ||
MOTOROLA |
23+ |
TO-51r |
5100 |
大量原裝高頻管、模塊現(xiàn)貨供應! |
詢價 | ||
MOTORO |
23+ |
最新批號! |
5600 |
專業(yè)分銷全系列產品!絕對原裝正品!量大可訂!價格優(yōu) |
詢價 | ||
MOTOROL |
21+ |
VQFN |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
MOTOROLA/摩托羅拉 |
23+ |
1688 |
房間現(xiàn)貨庫存:QQ:373621633 |
詢價 | |||
24+ |
5000 |
公司存貨 |
詢價 | ||||
MOTOROLA |
13+ |
SMD-4 |
22808 |
原裝分銷 |
詢價 | ||
MOT |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 | ||
MOT |
2020+ |
原廠封裝 |
350000 |
100%進口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
Microsemi |
16+ |
NA |
2000 |
進口原裝正品優(yōu)勢供應 |
詢價 |
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