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PHB21N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHB21N06LT

N-channelTrenchMOS?transistorLogiclevelFET

FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- ?d.c.tod.c.converters ?swi

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PHB21N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible Applications: ?d.c.tod.c.co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB21N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible Applications: ?d.c.tod.c.co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB21N06T

N-Channel60V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Logic-LevelGateDrive ?FastSwitching ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

PHB21N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD21N06LT

N-channelTrenchMOS?transistorLogiclevelFET

FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- ?d.c.tod.c.converters ?swi

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PHD21N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHD21N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible Applications: ?d.c.tod.c.co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD21N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible Applications: ?d.c.tod.c.co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號(hào):

    PHP21N06T/B

  • 制造商:

    PHILIPS

  • 制造商全稱:

    NXP Semiconductors

  • 功能描述:

    TRANSISTOR UNIVERSAL MOSFET SOT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
2017+
NA
28562
只做原裝正品假一賠十!
詢價(jià)
只做原裝
24+
36520
一級(jí)代理/放心采購(gòu)
詢價(jià)
原裝
1923+
NA
9200
公司原裝現(xiàn)貨假一罰十特價(jià)歡迎來(lái)電咨詢
詢價(jià)
NXP
22+
TO2203
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
NXP
23+
TO2203
9000
原裝正品,支持實(shí)單
詢價(jià)
NXPSemicondu
ROHS
56520
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
詢價(jià)
NXP
23+
TO2203
8000
只做原裝現(xiàn)貨
詢價(jià)
NXP
23+
TO2203
7000
詢價(jià)
NXP/恩智浦
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
NXP/恩智浦
2022
TO220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
更多PHP21N06T/B供應(yīng)商 更新時(shí)間2025-1-24 14:57:00