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IRFZ44S

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFZ44S

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ44S

Power MOSFET

FEATURES ?Advancedprocesstechnology ?Surface-mount(IRFZ44S,SiHFZ44S) ?Low-profilethrough-hole(IRFZ44L,SiHFZ44L) ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 Note? *Thisdatasheetp

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ44S

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ44S_V01

Power MOSFET

FEATURES ?Advancedprocesstechnology ?Surface-mount(IRFZ44S,SiHFZ44S) ?Low-profilethrough-hole(IRFZ44L,SiHFZ44L) ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 Note? *Thisdatasheetp

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ44SPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ44STRL

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ44STRLPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ44STRR

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ44STRRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFZ44S

  • 功能描述：

    MOSFET N-Chan 60V 50 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
SOT-263
7500
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
IR
05+
原廠原裝
4329
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
24+
TO-263
25000
詢價(jià)
IR
23+
TO-263
35890
詢價(jià)
IR
23+
TO-263-2
5400
專業(yè)優(yōu)勢(shì)供應(yīng)
 詢價(jià)
IR
24+
原廠封裝
1000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
24+
TO-263
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
 詢價(jià)
IR
24+
TO-263
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢價(jià)
IR
21+
TO-263
30000
只做正品原裝現(xiàn)貨
 詢價(jià)
更多IRFZ44S供應(yīng)商 更新時(shí)間2025-2-15 17:39:00

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